Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs  

作　　者：王志明 赵卓彬 胡志富 黄辉 崔玉兴 孙希国 默江辉 李亮 付兴昌 吕昕 

机构地区：[1]Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology [2]Hebei Semiconductor Research Institute [3]National Institute of Metrology

出　　处：《Journal of Semiconductors》2015年第8期83-87,共5页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61275107)

摘　　要：83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors （PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation current density/ass of 894 mA/mm, a maximum extrinsic transconductance gm, max of 1640 mS/mm, an extrapolated cutoff frequency ft of 247 GHz and a maximum oscillation frequency fmax of 392 GHz which were based on the measured S-parameters from 1 to 110 GHz. The minimum noise figure （NFmin） measured by the cold-source method is 1 dB at 30 GHz associated with a gain of 14.5 dB at Vds of 0.8 V and Ids of 17 mA. These results were obtained by the combination of increased InAs mole fraction in the channel, gate size scaling, parasitic reduction and the quantization channel. These excellent results make it one of the most suitable devices for millimeter wave （MMW） low noise applications.83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors （PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation current density/ass of 894 mA/mm, a maximum extrinsic transconductance gm, max of 1640 mS/mm, an extrapolated cutoff frequency ft of 247 GHz and a maximum oscillation frequency fmax of 392 GHz which were based on the measured S-parameters from 1 to 110 GHz. The minimum noise figure （NFmin） measured by the cold-source method is 1 dB at 30 GHz associated with a gain of 14.5 dB at Vds of 0.8 V and Ids of 17 mA. These results were obtained by the combination of increased InAs mole fraction in the channel, gate size scaling, parasitic reduction and the quantization channel. These excellent results make it one of the most suitable devices for millimeter wave （MMW） low noise applications.

关 键 词：INP PHEMT millimeter wave low noise on-wafer measurement 

分 类 号：TN386[电子电信—物理电子学]