具有优化倍增层InAlAs/InGaAs雪崩光电二极管  

InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer

作　　者：顾宇强 谭明[2] 吴渊渊[2] 卢建娅 李雪飞[1,2] 陆书龙[2] GU Yu-Qiang;TAN Ming;WU Yuan-Yuan;LU Jian-Ya;LI Xue-Fei;LU Shu-Long(Institute of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Nano-devices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]中国科学技术大学纳米技术与纳米仿生学院,安徽合肥230026 [2]中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州215123

出　　处：《红外与毫米波学报》2021年第6期715-720,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National High Technology Research and Development Program of China(2018YFB2003305);the Key R&D Program of Jiangsu Province(BE2018005);the Science and Technology Service Network Initiative of the Chinese Academy of Sciences(KFJ-STS-ZDTP-086);the Support From SINANO(Y8AAQ11003);Natural Science Foundation of Jiangsu Province(BK20180252)。

摘　　要：通过优化倍增层的厚度,研究了InAlAs/InGaAs雪崩光电二极管增益带宽积和暗电流之间的关系。利用仿真计算得出200 nm厚的倍增层能够改善增益带宽积并降低暗电流。制成的InAlAs/InGaAs雪崩光电二极管性能优异,与计算趋势一致。在获得0.85 A/W的高响应和155 GHz的增益带宽积的同时,器件暗电流低于19 nA。这项研究对雪崩光电二极管在未来高速传输的应用具有重要意义。In this paper,the trade-off between gain-bandwidth product(GBP)and dark current of an InAlAs/InGaAs avalanche photodiode(APD)was studied by optimizing multiplication layer.An optimized multiplication layer with 200 nm was proposed to improve the GBP and reduce the dark current.The fabricated InAlAs/InGaAs APD shows an excellent performance which is consistent with the calculated results.A high responsivity of 0.85 A/W(M=1)at 1.55μm and a high GBP of 155 GHz was achieved,whereas the dark current is as low as 19 nA at 0.9 Vb.This study is significant to the future high-speed transmission application of the avalanche photodiodes.

关 键 词：雪崩光电二极管 增益带宽积 暗电流 

分 类 号：O436[机械工程—光学工程]