太赫兹InP基InAlAs/InGaAs PHEMTs的研制（英文）  

Design and realization of THz InAlAs/InGaA sInP-based PHEMTs

作　　者：王志明 黄辉[2] 胡志富[3] 赵卓彬 崔玉兴[3] 孙希国[3] 李亮[3] 付兴昌[3] 吕昕 WANG Zhi-Ming;HUANG Hui;HU Zhi-Fu;ZHAO Zhuo-Bin;CUI Yu-Xing;SUN Xi-Guo;LI Liang;FU Xing-Chang;LYU Xin(Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology,Beijing 100081,China;National Institute of Metrology,Beijing 100029,China;Hebei Semiconductor Research Institute,Shijiazhuang 050051,China)

机构地区：[1]北京理工大学毫米波与太赫兹技术北京市重点实验室,北京100081 [2]中国计量科学研究院,北京100029 [3]河北半导体研究所,河北石家庄050051

出　　处：《红外与毫米波学报》2018年第2期135-139,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(61275107)

摘　　要：研制了一种T型栅长为90 nm的InP基In_(0.52)Al_(0.48)As/In_(0.65)Ga_(0.35)As赝配高电子迁移率晶体管(PHEMTs).该器件的总栅宽为2×25μm,展现了极好的DC直流和RF射频特性,其最大饱和电流密度和最大有效跨导分别为894 m A/mm和1 640 m S/mm.采用LRM+(Line-Reflect-Reflect-Match)校准方法实现系统在1~110 GHz全频段内一次性校准,减小了传统的分段测试多次校准带来的误差,且测试数据的连续性较好.在国内完成了器件的1~110 GHz全频段在片测试,基于1~110 GHz在片测试的S参数外推获得的截止频率ft和最大振荡频率f_(max)分别为252 GHz和394 GHz.与传统的测试到40 GHz外推相比,本文外推获得的f_(max)更加准确.这些结果的获得是由于栅长的缩短,寄生效应的减小以及1~110 GHz全频段在片测试的实现.器件的欧姆接触电阻率减小为0.035Ω·mm.In this paper,90-nmT-shaped gate InP-based In0 52A10 48As/In0 65Ga0 35As pseudomorphic high electron mobility transistors(PHEMTs)with well-balanced cut-off frequency/t and maximum oscillation frequency/max are reported.This device with a gate-width of 2 x 25!m shows excellent DC characteristics,including saturation crnrent density(s of 894 mA/mm,and a maximum extrinsic transconductance%m max of Y S40 mS/mm.The off-state breakdown voltage()*off_st e)defined at a gate crnrent of 1mA/mm is 3.3 V.The RF measurement is carried out covering the full frequency range from 1 to 110 GHz,an extrapolated/t of 252 GHz a n d'a of 394 GHz are obtained,respectively.These results a e obtained by the combination of gate size scaling,paasitics reduction and the on-wafer measurement in the full frequency band from 1 to 110 GHz.

关 键 词：磷化铟 赝配高电子迁移率晶体管 INALAS/INGAAS 在片测试 单片集成电路 

分 类 号：TN385[电子电信—物理电子学]