截止波长2.2μm的平面型延伸波长InGaAs探测器  

Planar wavelength-extended In0.75Ga0.25As detector with 2.2-μm cut-off wavelength

作　　者：程吉凤[1,2,3] 李雪 邵秀梅[1,2] 李淘[1,2] 王红真[1,2,3] 马英杰 杨波 龚海梅[1,2] CHENG Ji-Feng;LI Xue;SHAO Xiu-Mei;LI Tao;WANG Hong-Zhen;MA Ying-Jie;YANG Bo;GONG Hai-Mei(State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Key Laboratory of Infrared Imaging Materials and Detectors,Chinese Academy of Sciences,Shanghai 200083,China;University of the Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院红外成像材料与器件重点实验室,上海200083 [3]中国科学院大学,北京100049

出　　处：《红外与毫米波学报》2022年第5期804-809,共6页Journal of Infrared and Millimeter Waves

基　　金：上海市优秀学术/技术带头人计划资助(21XD1404200);中国科学院重点部署项目(ZDRW-CN-2019-3);中国科学院联合基金(6141A01170106);上海市级科技重大专项(2019SHZDZX01);国家自然科学基金(62075229);国家自然科学基金(62175250)。

摘　　要：采用闭管扩散的方法成功研制了截止波长2.2μm的平面型延伸波长InGaAs探测器芯片。在分子束外延法(MBE)生长的In_(0.75)Al_(0.25)As/In_(0.75)Ga_(0.25)As/In_(0.75)Al_(0.25)As外延材料上,采用砷化锌作为扩散掺杂源、SiN_(x)作为扩散掩膜层,实现了扩散成结。分析了扩散结深和载流子侧向收集宽度、Ⅰ-Ⅴ特性、光谱响应特性和探测率,结果表明:150 K温度下,器件暗电流密度0.69 nA/cm^(2)@-10 mV,响应截止波长和峰值波长分别为2.12μm和1.97μm,峰值响应率为1.29 A/W,峰值量子效率达82%,峰值探测率为1.01×10^(12) cmHz^(1/2)/W。这些结果对后续进一步优化平面型延伸波长InGaAs焦平面探测器有重要的指导意义。Planar-type 2.2μm wavelength-extended InGaAs photodetectors(PDs)using the sealed-ampoule diffusion method was reported.The zinc arsenide powder was used as the dopant source,which was driven into the cap of the In_(0.75)Al_(0.25)As/In_(0.75)Ga_(0.25)As/In_(0.75)Al_(0.25)As hetero structure materials grown by molecular beam epitaxy(MBE),using a SiN_(x) as diffusion mask deposited by ICP-CVD.The junction depth,the lateral collection width of photogenerated carri-ers,the Ⅰ-Ⅴ characteristics,the spectral response and the detectivity of the detector at different temperatures were ana-lyzed.The results indicate that the PD exhibits a low dark current density of 0.69×10^(−9)A/cm^(2) at-10 mV at 150 K.The cutoff wavelength and peak wavelength were 2.12μm and 1.97μm.The peak detectivity,peak responsivity and quan-tum efficiency was 1.01×10^(12) cm·Hz^(1/2)/W,1.29 A/W and 82%respectively.These results suggest that the planar-type InGaAs can reach high performance.

关 键 词：延伸波长 INALAS/INGAAS 扩散 暗电流密度 量子效率 

分 类 号：TN215[电子电信—物理电子学]