不同气氛保护下退火制备的CuO/SiO_2复合薄膜微观结构分析  

Analysis to Microstructure of CuO/SiO_2 Composite Thin Films Annealing at Different Atmospheres

作　　者：石锋[1] 李玉国[1] 孙钦军[1] 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《Journal of Semiconductors》2008年第12期2381-2384,共4页半导体学报（英文版）

摘　　要：采用射频磁控共溅射法在Si(111)衬底上沉积Cu/SiO2复合薄膜,然后在N2和NH3保护下高温退火,再于空气中自然冷却氧化,制备出CuO结构,并对其微观结构进行分析.N2保护下退火温度为1100℃时样品中主晶相为立方晶系的CuO(200)晶面,薄膜样品表面出现纳米线状结构,表面组分主要包括Cu,O元素,冷却氧化形成CuO/SiO2复合薄膜.NH3气氛保护下退火,随着退火温度的升高,CuO由单斜晶相逐渐转变为立方晶相,CuO薄膜结晶质量提高.样品于900℃和1100℃退火后,形成有序散落的微米级颗粒,前者由粒状团簇组成,颗粒表面比较粗糙;后者由片融状小颗粒融合而成,颗粒表面比较光滑.Cu/SiO2 composite thin films were deposited on n-type Si （111） substrates using radio frequency （RF） magnetron co-sputtering method,annealed at high temperature in N2 and NH3 atmosphere,and then cooled and oxidated in the air to form CuO structure. Microstructure of the films was analyzed. The main phase of sample is cubic CuO（200） crystal face and nano-line structure forms with Cu,O elements as the main components to form CuO/SiO2 composite thin films in the sample surface after annealed at 1100℃ in N2 atmosphere. As the annealing temperature increases in NH3 atmosphere, the structure of CuO turns from monoclinic crystal phase to cubic phase and the crystal quality of CuO thin films improves. After annealed at 900 and 1100℃ ,ordered and scattered micro-particles are formed in samples, and the former is made up of granular clusters with rough surface while the latter is constituted by flake small particles with smooth surface.

关 键 词：射频磁控共溅射法 CuO/SiO2复合薄膜 微观结构 退火 半导体材料 

分 类 号：O484.8[理学—固体物理] TN304[理学—物理]