GaN转移电子器件的性能与基本设计  

Performance and Design of GaN-Based Transferred-Electron Devices

作　　者：邵贤杰[1] 陆海[1] 张荣[1] 郑有炓[1] 李忠辉[2] 

机构地区：[1]南京大学物理学系江苏省光电信息功能材料重点实验室,南京210093 [2]南京电子器件研究所单片集成电路与模块国家重点实验室,南京210016

出　　处：《Journal of Semiconductors》2008年第12期2389-2392,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划(批准号:2006CB921803);国家自然科学基金(批准号:60721063);单片集成电路与模块国家重点实验室基金(批准号9140C1401010701);教育部新世纪优秀人才支持计划(批准号:NCET-07-0417)资助项目~~

摘　　要：基于GaN转移电子器件最基本的工作模式——畴渡越时间模式,计算了GaN转移电子器件的理想最高振荡频率,得到该类型微波转移电子器件的最高振荡频率可达4.7THz,接近GaAs转移电子器件最高振荡频率(0.6THz)的8倍.从理论上计算出GaN转移电子器件的理想最大输出功率,结果表明GaN转移电子器件在功率输出方面具有很大优势.最后还讨论了GaN转移电子器件在畴渡越时间模式下,能够产生稳定Gunn振荡的两个基本条件,即电子浓度N与器件有源区长度L乘积要大于该器件的设计标准((NL)0=6.3×1012cm-2)及有源区的掺杂浓度N要小于临界掺杂浓度Ncrit(3.2×1017cm-3).本工作揭示出GaN转移电子器件在高频率和大功率输出方面都具有重要优势,作为大功率THz微波信号源将具有广阔的应用前景.Based on the basic transit-time domain operation mode of TEDs,we first calculated the ideal maximum oscillation frequency of GaN-based transferred-electron devices （TEDs） ,which can be as high as 4.7THz. This value is nearly 8 times as high as that of GaAs-based TEDs, which is about 0.6 THz. Next,we calculated the maximum output power of GaN-based TEDs indicating that GaN- based TEDs are promising for high microwave power applications. We also discussed the two critical conditions in GaN-based design for generating stable Gunn oscillations in transit-time domain mode. Our calculation indicates that the product of electron concentration and the length of active layer should be higher than a critical value of 6.3 × 10^12 cm^-2 ; and the doping lever of the active layer has to be smaller than a critical level of 3.2 × 10^17 cm^-3. This study suggests that GaN-based TEDs have significant advantages for high-frequency and high-power microwave generation,which are perspective for high-power THz signal source applications.

关 键 词：GAN 转移电子器件 微分负阻效应 最高频率 临界掺杂浓度 

分 类 号：TN385[电子电信—物理电子学]