5Gb／s单片集成光接收机前端模拟仿真及研制  

Simulation and Fabrication of 5Gb/s Monolithically Integrated Optical Receiver Front End

作　　者：范超[1,2] 陈堂胜[2] 陈辰[2] 焦世龙[1,2] 陈镇龙[1] 刘霖[1] 王昱琳[1] 叶玉堂[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054 [2]单片集成电路与模块国家级重点实验室,南京210016

出　　处：《光电工程》2008年第11期29-32,72,共5页Opto-Electronic Engineering

基　　金：单片集成电路与模块国家级重点实验室基金(9140C1406020708)

摘　　要：基于0.5μmGaAs PHEMT标准工艺研制了850nm单片集成光接收机前端,集成方式为PIN光探测器和跨阻放大器。论文依据已发表的文献数据为基础并借助SILVACO公司的模拟软件建立探测器模型,实验结果表明,模型和实测结果对比有较好的一致性。光接收机最高工作速率5Gb/s,其中,探测器光敏面直径50μm,电容0.51pF,暗电流小于30nA。跨阻放大器-3dB带宽接近10GHz,跨阻增益约43dBΩ,最小等效输入噪声电流密度约为17.6pA/Hz1/2。A 850 nm monolithically integrated optical receiver front end, which consisted of a PIN photodiode and a Transimpedance Amplifier （TIA）, was designed and fabricated in a 0.5 μm gate-length GaAs PHEMT standard process. A photodiode model was established based on published literature and SILVACO software. The results of experiment show that the matching between model and data of test is good. The eye diagrams of optical receiver are measured at bit rate up to 5 Gb/s. The photodiode has a diameter of 50 μm, a capacitance of 0.51 pF and a maximum dark current of 30 nA. The TIA achieves a -3 dB bandwidth of nearly 10 GHz, a transimpedance gain of 43 dBΩ and minimal equivalent input noise current density of 17.6 pA/Hz^1/2.

关 键 词：光电集成电路 PHEMT PIN 跨阻放大器 ATLAS 

分 类 号：TN15[电子电信—物理电子学]