工作气氛对氮化硅薄膜结构的影响  

INFLUENCE OF WORKING GAS ON STRUCTURES OF SILICON NITRIDE THIN FILMS

作　　者：徐征[1] 贾晓昀[1] 赵谡玲[1] 张福俊[1] 唐煜[2] 周春兰[2] 王文静[2] 

机构地区：[1]北京交通大学光电子技术研究所,北京交通大学发光与光信息技术教育部重点实验室,北京100044 [2]中国科学院电工研究所,北京100083

出　　处：《太阳能学报》2008年第11期1344-1347,共4页Acta Energiae Solaris Sinica

基　　金：国家高新技术研究发展(863)计划(2006AA03Z0412);国家自然科学基金(60576016);北京市自然科学基金(2073030);博士点新教师基金(20070004031);北京市科技新星计划(2007A024);教育部留学回国科研启动基金、校基金项目(2005SM057;2006XM043)

摘　　要：以石英玻璃和抛光硅片做为衬底材料,采用射频磁控反应溅射法,通过改变 Ar/N_2流量比得到了一系列氮化硅薄膜。用分光光度计对薄膜的光学特性进行了表征;X 射线光电子能谱(XPS)表明薄膜中出现了 Si-N 的键合结构;原子力显微镜(AFM)图显示了在抛光硅片上制备出的薄膜比较平整、致密。实验结果表明:纯 N_2条件下制备的薄膜比使用 Ar 和 N_2混合气体条件下制备的薄膜中的 SiN_x 含量要低;在混合气体参与的条件下,随着氮气流量的增加,薄膜中出现了微孔,缺陷态增加,并对微孔的形成机制进行了解释。Silicon nitride thin films were prepared by radio frequency（ r. f. ） magnetron reactive sputtering with different Ar/N2 flow ratio at 80℃ temperature. The polished silicon wafers were used as the substrate materials in order to make surfaces of the sample smooth. The influence of working gas on structures and optical properties of silicon nitride thin films were studied. Comparisons of the optical properties of samples were made by reflection spectra in order to get a good way to reduce the reflectivity. From X-ray photoelectron spectroscopy （XPS） experiments, the bonding structure of Si-N appeared in the film which were confirmed by two peaks in standard binding enery. The atomic force microscope（AFM） images show that the films deposited on the silicon wafers were flat and compact. The experiment shows that some micropores and defects existed in the films accompanied with increasing of N2 flow, which have a great impact on the properties of the films. And the content of SiNx in the films prepared in purled N2 gas is higher than that deposited in the Ar/N2 mixtures ambience.

关 键 词：射频磁控反应溅射 氮化硅薄膜 光学特性 

分 类 号：TK51[动力工程及工程热物理—热能工程]