有源层厚度对VCSEL混沌动力学特性的影响  

Influence of Thickness of Active Region on Chaos Dynamics of VCSEL

作　　者：王伟[1] 张胜海[1] 钱兴中[1] 米朝伟[1] 

机构地区：[1]信息工程大学理学院,河南郑州450001

出　　处：《信息工程大学学报》2008年第4期509-512,共4页Journal of Information Engineering University

摘　　要：利用数值模拟的方法研究了有源层厚度对电流调制下垂直腔面半导体激光器(VCSELs)混沌动力学行为的影响。模拟结果表明有源层厚度较小的系统处于稳定的周期1输出状态,有源层厚度较大的系统在有些参数区间会出现阵发性混沌。有源层厚度是影响VCSELs混沌动力学特性的重要结构参数。This paper studied the effect of thickness of active region on Chaos dynamics of vertical - cavity surface-emitting lasers （VCSEL） being subject to direct current modulation by numerical simulation method. The simulant results show that Laser with small thickness of active region remains a signal period stability, and Laser with large thickness of active region comes into intermission Chaos dynamics in some region of parmeters. Thickness of active region is important structure parameter that affects the Chaos dynamics of VCSEL.

关 键 词：混沌动力学特性 垂直腔面发射半导体激光器 有源层厚度 

分 类 号：TN248.4[电子电信—物理电子学]