CMP加工过程中抛光速度对液膜厚度的影响分析  

Effect of Polishing Speed on Slurry Film Thickness in Chemical Mechanical Polishing

作　　者：郁炜[1] 吕迅[2] 楼飞燕[2] 

机构地区：[1]浙江工业大学浙西分校信息与电子系,浙江衢州324000 [2]浙江工业大学机械制造及自动化教育部重点实验室,浙江杭州310032

出　　处：《轻工机械》2008年第6期97-99,共3页Light Industry Machinery

基　　金：浙江省自然科学基金(Y104241)

摘　　要：化学机械抛光过程中抛光工艺参数对抛光液的流动特性有重要影响。采用LIF技术实验研究抛光参数对抛光液液膜厚度的影响。研究表明,抛光液膜厚度随着抛光速度的增加而增加,增加的趋势随抛光转速的提高而减缓。同时液膜厚度随着抛光压力的增加而减少。通过抛光参数的变化对抛光液流动特性的影响分析,为改善CMP加工工艺提供理论性的依据。During chemical mechanical polishing process parameters has important influence on the flow characteristics of slurry film. The paper adopted LIF experimental technique to study the influence of polishing parameters on slurry film thickness. The study indicates that the thickness of slurry layer increases with increasing polishing speed and the increasing trend decreases with increasing polishing rotational speed. However, the slurry film thickness decreases with the increasing polishing pressure. By analyzing the effects of the variation CMP process parameters on the flow characteristics of slurry film, provide basic theory for improving CMP processing technology.

关 键 词：化学机械抛光 液膜厚度 抛光速度 激光诱导荧光 

分 类 号：TG580.691[金属学及工艺—金属切削加工及机床]