门极换流晶闸管关键技术的研究  

Study on Key Techniques of Gate Commutated Thyristor

作　　者：王彩琳[1] 

机构地区：[1]西安理工大学,陕西西安710048

出　　处：《电力电子技术》2008年第12期52-56,共5页Power Electronics

基　　金：陕西省自然科学基金项目(2007E208);陕西省教育厅专项科研计划项目(08JK379);西安理工大学博士启动基金项目~~

摘　　要：通过对门极换流晶闸管(GCT)关键技术的研究,提出了一种沟槽隔离的逆导型GCT结构。借助MEDICI软件,模拟了GCT的各项特性及其在内部的微观现象,对透明阳极、缓冲层、隔离区等关键结构参数进行了优化设计,并对其制作工艺进行分析。研究结果表明,采用透明阳极、缓冲层和沟槽隔离的逆导型GCT结构,不仅可以获得更好的静、动态性能,而且可大大降低制作工艺难度,有望在国内现有工艺装备下进行开发。The key techniques of gate commutated thyristor（GCT） are studied.A new RC-GCT structure with trench isola- tion is presented.The characteristics of GCT and the interior micro-phenomenon are simulated and optimum designs of n buffer layer,transparent anode region and pnp isolation region are done by MEDICI simulator.And the fabrication process method is analyzed.The results show that RC-GCT structure with n buffer layer, transparent anode and trench isolation can obtain the better static and dynamic characteristics and reduce the process difficultly, and it is hopeful to develop the device under the existing domestic process equipment.

关 键 词：晶闸管 换流/门极换流晶闸管 透明阳极 沟槽隔离 

分 类 号：TN34[电子电信—物理电子学]