LDD结构参数对多晶硅薄膜晶体管热载流子退化的影响  

Influence of Parameters of LDD Structures on Hot Carrier Degradation of Polycrystalline Silicon Thin Film Transistor

作　　者：吕志娟[1,2] 韩郑生[3] 钟传杰[1] 

机构地区：[1]江南大学信息工程学院,江苏无锡214122 [2]常熟理工学院物理与电子科学系,江苏常熟215500 [3]中国科学院微电子研究所,北京100029

出　　处：《液晶与显示》2008年第6期692-695,共4页Chinese Journal of Liquid Crystals and Displays

摘　　要：基于Tsuprem4和Medici模拟软件,研究了LDD结构对多晶硅薄膜晶体管热载流子退化的影响。计算结果表明当栅氧层厚度tox=0.07μm时,碰撞离化产生率和热电子注入电流峰值将达到最大,扩展区掺杂浓度增加,使沟道中横向电场和碰撞离化产生率的峰值分布区域向着栅电极的方向移动,即在应力作用下,热载流子退化的区域向着栅电极的方向漂移。The influence of parameters of LDD structures on the hot carriers effect of polycrystalline silicon thin film transistor（ps TFT） was investigated based on Tsuprem4 and Medici simulation. It was found that the peak value of impact ionization generation rate and hot electron injection current can reach to maximum when the thickness of gate oxide is 0.07μm. As the doping concentration in the extending zone diffusion increases, lateral electrical field in the channel region and the distribution of impact ionization generation rate are moving toward gate electrode, i. e. , the region of hot carrier degeneration is drifting towards gate electrode under stress.

关 键 词：多晶硅薄膜晶体管 热载流子退化 MEDICI Tsuprem4 

分 类 号：TN321.5[电子电信—物理电子学] TN27