基于SET/MOS混合结构的只读存储器设计  

Design of ROM Based on Hybrid Architecture of SET and MOS Transistors

作　　者：李芹[1] 蔡理[1] 吴刚[1] 

机构地区：[1]空军工程大学理学院,西安710051

出　　处：《微电子学》2008年第6期895-898,共4页Microelectronics

基　　金：陕西省自然科学基金资助项目(2005F20);空军工程大学学术基金资助项目(2005ZK19)

摘　　要：结合单电子晶体管的I-V特性和传统的CMOS工艺设计存储器的思想,设计实现了4×4位的只读存储器电路。该电路各主要组成部分均由单电子晶体管和MOS管的混合结构构成,通过对该电路进行SPICE仿真分析,验证了电路设计的正确性。研究表明,只读存储器的取数时间达到了纳秒级;该电路与纯SET实现的电路相比,驱动能力得到了提高;与传统晶体管实现的电路相比,具有高集成度、低功耗等优点。Based on the I-V characteristics of single-electron transistors and the idea of MOS digital logic circuits, a 4 × 4-bit ROM was constructed. The main parts of the ROM were composed of SET/MOS hybrid structure. The circuit was validated by using SPICE. The study showed that the ROM had an access time down to nanosecond. Compared with pure SET circuits, the proposed ROM circuit has an enhanced driving capability, and it also has advantages of high integration density and low power, compared with conventional circuits.

关 键 词：单电子晶体管 MOS晶体管 反相器 译码器 只读存储器 

分 类 号：TN389[电子电信—物理电子学]