氮化镓HEMT器件的新型Cold FET模型  

New Cold FET Model for GaN HEMT Devices

作　　者：郑惟彬 李晨[2] 李辉 陈堂胜 任春江 

机构地区：[1]单片集成电路与模块国家重点试验室,南京210016 [2]中国电子科技集团公司基础部,北京100038

出　　处：《电子器件》2008年第6期1765-1768,共4页Chinese Journal of Electron Devices

摘　　要：改进等效寄生电感的提取对提高小信号等效电路模型的仿真精度具有重要意义,尤其是氮化镓器件(GaN)。针对传统的等效寄生电感提取方法,本文推导了用于GaN HEMT器件的新型Cold FET模型及参数提取。通过对栅宽分别为200μm和1 000μm GaN HEMT的仿真/测试,表明:新的Cold FET模型可用于GaN HEMT器件等效寄生电感的提取。这将有助于场效应晶体管模型的研究。In order to gain good simulation results of a small-signal equivalent circuit model, it is very important to improve the extraction of equivalent parasitic inductors,especially for GaN devices. Comparing to the traditional extraction method of parasitic inductors, this paper deduces a new Cold FET model and parameter extraction for GaN HEMT devices. By comparing the simulation and measurement of GaN HEMT with gate width of 200 μm and 1000 μm respectively, shown that, the new Cold FET model can be used to extract parasitic inductors of GaN HEMT devices. This helps to the research of FET models.

关 键 词：氮化镓 高电子迁移率晶体管 COLD FET模型 

分 类 号：TN386.1[电子电信—物理电子学]