层数变化对ZnO/In_2O_3多层膜微观结构及光电性能的影响  

Influence of layer variation on the properties of ZnO/In_2O_3 multilayer transparent conductive films

作　　者：商世广[1] 朱长纯[1] 贺永宁[1] 

机构地区：[1]西安交通大学电子与信息工程学院,西安710049

出　　处：《功能材料与器件学报》2008年第6期966-970,982,共6页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目(60036010;60476037);国家"863"计划资助项目(2001AA313090)

摘　　要：用直流磁控溅射和热氧化法在玻璃衬底上制备ZnO/In2O3透明导电多层膜,当总厚度一定时,调节溅射沉积的层数与相应各层膜的厚度,研究该多层膜微观结构、光学性能和电学性能的变化。XRD和SEM分析表明:随着溅射沉积层数的增加,In2O3衍射峰的强度不断地减弱,ZnO衍射峰出现了不同的晶面择优取向;多层膜表面的ZnO晶粒粒径变小,光洁度增加。四探针法方块电阻测试表明:低温热氧化时,ZnO/In2O3多层膜的方块电阻随层数的增加而上升;高温氧化时,ZnO/In2O3多层膜的方块电阻随层数的增加而下降。可见光光谱分析表明:随着溅射沉积层数的增加,ZnO/In2O3多薄膜在可见光区的平均透过率增大,透过率的峰值向短波方向偏移。ZnO/In2O3 muhilayer films were prepared on glass substrate by DC magnetron sputtering and thermal oxidation. For different process parameters, such as layer number and corresponding film thickness, the structural, electrical and optical properties of ZnO/In2O3 muhilayer films with fixed thickness were investigated. When the layer number of the ZnO/In2O3 muhilayer films increases, the following results are observed. X -ray diffraction reveals that the intensity- of In2O3 diffraction peaks decreases and ZnO diffraction peaks intends to some crystallite plane; Scanning electron microscopy images show that the muhilayer layer surface becomes smoother and the diameters of ZnO grains on the surface are reduced; the four - point probe measure reveals that the square resistances are increased at low oxidation temperature and reduced at high oxidation temperature ; the transmittance analysis indicates the average transmittance in visible wavelength region increases and the maximal transmittance shifts to short wavelength.

关 键 词：多层膜 磁控溅射 方块电阻 

分 类 号：O484.4[理学—固体物理]