基于Ga-SbTe的高性能相变存储单元的设计和仿真  

Design and simulation of a high performance Phase Change Memory cell based on Ga-SbTe

作　　者：尹文[1] 程秀兰[1] 

机构地区：[1]上海交通大学微电子学院,上海200240

出　　处：《功能材料与器件学报》2008年第6期988-994,共7页Journal of Functional Materials and Devices

基　　金：国家973计划资助(2003CB314702);国家自然科学基金资助项目(60571004;90406024)

摘　　要：相变存储器(PCM)因依靠电阻率的变化来存储的模式,成为65nm以下非易失存储器应用的研究热点。然而,相变存储器的擦写功耗、复位电压、热稳定性和擦写寿命一直是相变存储器发展的几个瓶颈。对此,设计了一种基于相变合金Ga3Sb8Te1的新型嵌入式相变存储器,并建立有限元(FEA)热学,结晶动力学和SPICE宏模型。通过瞬态热学和结晶动力学仿真表明,基于Ga3Sb8Te1的相变存储器具有更高的热稳定性和可循环擦写次数、更低的复位功耗,更快的置位频率,是一种较为理想的高性能相变存储器。Phase change memory （PCM） becomes very hot in Non volatile memory （NVM） under 65nm process due to its special storage mode. However, several bottle nets like power, thermal stability and cycling ability restrict the development of PCM Thus, in this paper, a novel phase change memory based on alloy Ga3Sb8Te1 was designed, then FEA transient thermal, crystalline kinetics analysis and SPICE macro model of embedded PCM based on Ga3Sb8Te1 material was established. Through FEA transient thermal simulation and crystalline kinetics analysis result, new phase change alloy Ga3Sb8Te1 was proved to have lower rset power, higher thermal stability and cycling ability as well as faster set frequency.

关 键 词：相变存储器 瞬态热学仿真 结晶动力学 SPICE宏模型 

分 类 号：TN303[电子电信—物理电子学]