InGaAsP/GaAs单量子阱SCH半导体激光器的液相外延  

LPE of InGaAsP/GaAs Semiconductor Lasers

作　　者：薄报学[1] 朱宝仁[1] 张宝顺[1] 高欣[1] 任大翠[1] 张兴德[1] 

机构地区：[1]长春光机学院高功率半导体激光国家重点实验室

出　　处：《中国激光》1998年第1期21-24,共4页Chinese Journal of Lasers

摘　　要：利用一种改进的液相外延技术进行了ＧａＡｓ衬底上ＩｎＧａＡｓＰ材料的生长，１０Ｋ温度下光荧光半宽度（ＦＷＨＭ）为１４ｍｅＶ，获得了阈值电流密度为３００Ａ／ｃｍ２的ＳＣＨ多层结构外延片，宽台面激光器最大连续输出功率达到２．１Ｗ。A modified liquid phase epitaxy method was used to grow InGaAsP materials on the GaAs substrate. The FWHM of photoluminescence at 10 K was 14 meV, wafers of SCH multilayer epitaxial structures were obtained with a threshold current density of 300 A/cm 2, and the hgihest CW output power obtained from wide stripe lasers was 2.1 W.

关 键 词：液相外延 半导体激光器 激光器结构 

分 类 号：TN248.4[电子电信—物理电子学] TN243