阳极氧化对GaAs/AlGaAs量子线荧光的影响  

Effect of Anodization on Photoluminescence of GaAs/AlGaAs Quantum Wires

作　　者：陈效双[1] 万明芳[1] 刘兴权[1] 窦红飞[1] 陆卫[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家实验室

出　　处：《Journal of Semiconductors》1998年第1期72-75,共4页半导体学报（英文版）

摘　　要：本文报道脉冲阳极氧化对低压金属有机化学气相沉积自组织生长的ＧａＡｓ／ＡｌＧａＡｓ量子线荧光的影响．通过比较阳极氧化和无阳极氧化且均快速退火样品的荧光谱获得互扩散减少直接生长样品存在的缺陷和无序等，从而减小量子线非辐射复合；另一方面，无序等涨落的消除减小槽边量子阱对光生载流子的局域化，导致大量的光生载流子从槽边量子阱输运到量子线中产生相对于无阳极氧化非常增强的荧光信号．考虑量子线横向宽度的变化作为微扰。Abstract The effect of anodization on the photoluminescence (PL) of GaAs/AlGaAs quantum wires of the seeded self ordering growth by low pressure metalorganic chemical vapor deposition(MOCVD) is reported. A comparison of PL from the anodization and subsequent rapid thermal annealing quantum wire and the as grown and also rapid thermal annealing quantum wire shows that the lateral confinement of quantum wire is enhanced, while the confinement of side well is reduced. Thus, the transfer of photo generated carriers from side well into quantum wire results in that the PL intensity of quantum wire is enhanced for the anodization inducing the intermixing. By considering the lateral tapering in the thickness of quantum wire crescent as a perturbation, the calculation shows that the results in agreement with the experimental ones by a simple model of effective mass approximation.

关 键 词：砷化镓 镓铝砷化 阳极氧化 量子线 荧光 

分 类 号：TN304.23[电子电信—物理电子学] TN304.26