氧气浓度对ZnO薄膜表面形貌和微结构的影响  

Effects of oxygen concentration on surface morphology and microstructure of ZnO thin films

作　　者：肖慧[1] 徐哈宁[1] 朱昌[2] 

机构地区：[1]东华理工大学核工程技术学院,江西抚州344000 [2]西安工业大学光电工程学院,陕西西安710032

出　　处：《电子元件与材料》2009年第1期28-30,共3页Electronic Components And Materials

基　　金：陕西省外国专家局专项科研基金资助项目(No.05JS02)

摘　　要：采用反应磁控溅射技术，在SiO2基底上制备了ZnO薄膜。通过原子力显微镜（AFM）和X射线电子能谱仪（XPS）对薄膜表面形貌及微结构进行了表征，分析了氧气之体积分数φ（O2）为40％-60％时，对薄膜表面形貌和微结构的影响。结果表明：随着氧气体积分数的增大，薄膜c轴晶向生长减弱，表面形貌趋向平整，氧化反应程度增强；φ（O2）为60％时，薄膜表面粗糙度约为3nm，其内部的r（Zn：O）接近1：1。ZnO thin films were deposited on SiO2 substrates by reactive magnetron sputtering. Effects of oxygen concentration （volume fraction range of 40% - 60% ） on surface morphology and microstructure of the thin films were studied by AFM and XPS. Results show that with increase of volume fraction of oxygen, the c-orientation growth of the thin film decreases; surface morphologies close to flat and oxidation reaction level increases. When φ（O2） is 60%, the ZnO thin film with better surface morphology and ideal microstructure is obtained. Its surface roughness is about 3 nm and mole ratio of Zn：O of inner is closed to 1： 1.

关 键 词：无机非金属材料 ZNO薄膜 氧气浓度 形貌 结构 

分 类 号：O484.1[理学—固体物理]