SmTbCo交换耦合双层膜的制备及特性研究  

Preparation and properties of exchange-coupled dual-layer SmTbCo thin films

作　　者：俞伟钧[1] 钱显义 黄致新[3] 

机构地区：[1]常州工学院理学院,江苏常州213002 [2]常州公学院电子信息与电气工程学院,江苏常州213002 [3]华中师范大学物理科学与技术学院,湖北武汉430079

出　　处：《湖北大学学报（自然科学版）》2008年第4期370-373,共4页Journal of Hubei University：Natural Science

基　　金：国家自然科学基金(60490291)资助项目

摘　　要：采用射频磁控溅射方法制备SmTbCo交换耦合双层膜并对其磁特性进行研究.所制备的SmTbCo双层膜,是由饱和磁化强度为340 emu/cm3的富过渡金属读出层和矫顽力为5.80 kOe的富稀土写入层构成.通过交换耦合,具有大的饱和磁化强度SmTbCo读出层的矫顽力,可以由1.85 kOe提高到5.96 kOe.双层薄膜的交换耦合及其在外场中的磁化行为,可以由微磁模型得到合理的解释.The exchange-coupled SmTbCo dual-layer media was prepared by an r. f magnetron sputtering system and the magnetic properties were investigated. The prepared SmTbCo dual layer is composed of 340 emu/cm^3 TM-rich readout layer and 5.80 kOe RE-rich memory layer, meeting the requirements of high saturation magnetization and large coercivity for hybrid recording, Through exchange coupling, the coercivity of the high Ms SmTbCo layer was greatly enhanced from 1.85 to 5.96 kOe. The reversal magnetization of the SmTbCo exchange-coupling dual-layer films was analyzed based on a miro-magnetic model.

关 键 词：薄膜 制备 交换耦合 磁特性 

分 类 号：O482.5[理学—固体物理]