难熔金属及硅化物薄膜特性研究  

Technology Study on Properties of Refractory Metals and Silicide Film Preparation

作　　者：胡延年[1] 

机构地区：[1]辽宁大学电子科学与工程系

出　　处：《半导体情报》1998年第1期48-50,共3页Semiconductor Information

摘　　要：对难熔金属及其硅化物的形成、特性进行了研究。采用溅射难熔金属、热硅化反应的方法，解决了ＶＬＳＩ工艺中由于ＭＯＳ电路图形尺寸缩小带来的栅电阻增大的问题；采用硅化物阻挡层和Ａ１多层金属布线方法，解决了欧姆接触和铝的电迁移问题。In this paper , we studied the formation and properties of refractory metal sili- cide. By the means of sputtering refractory metals and heat silicification reaction , the question that grid resistor increase during decreasing the graph dimension of MOS cir- cuit is resolved. And by the means of silicide , resist layer and aluminium multilayer metal lines , the questions of ohmic-contact and A1 electron mobility are resolved.

关 键 词：磁控溅射 难熔金属 硅化物 VLSI 制造工艺 

分 类 号：TN470.5[电子电信—微电子学与固体电子学]