采用多孔氧化硅形成超薄SOI结构的研究  

Ultra thin film Silicon on Insulator Structure Fabricated by Using Oxidizing Porous Silicon Technology

作　　者：黄宜平[1,2] 李爱珍[1,2] 蒋美萍 邹斯洵[1,2] 李金华 竺士炀 

机构地区：[1]复旦大学电子工程系 [2]江苏石油化工学院

出　　处：《Journal of Semiconductors》1998年第2期103-107,共5页半导体学报（英文版）

摘　　要：本文采用多孔氧化硅全隔离技术获得了硅膜厚度小于１００ｎｍ、硅岛宽度大于１００μｍ的超薄ＳＯＩ（ＴＦＳＯＩ）结构．用透视电子显微镜剖面分析技术（ＸＴＥＭ）、扩展电阻分析（ＳＲＰ）、喇曼光谱、台阶轮廓仪和击穿电压测量等技术对多孔氧化硅超薄ＳＯＩ结构进行了分析，结果表明其顶层硅膜单晶性好，硅膜和埋层氧化层界面平整．实验表明硅岛的台阶形貌及应力状况取决于阳极化反应条件．在硅膜厚约为８０ｎｍ的ＴＦＳＯＩ材料上制备了ｐ沟ＭＯＳＦＥＴ，输出特性良好．Abstract Ultra thin film silicon on insulator (TFSOI) structure with 100nm thick and 100μm wide top Si islands have been fabricated by using full isolation by oxidizing porous silicon (FIPOS) technique. These structures are characterized by using XTEM, SRP, Raman spectroscopy, α step and electrical breakdown measurement. The results suggest that the TFSOI structures are of high quality and the top silicon/buried oxide interface is relatively planar and uniform. The shape of the silicon islands and the stress in the top silicon depend strongly on the condition of anodization. P channel TFSOI/MOS transistors have been fabricated in 80nm thick top silicon layer with good output characteristics.

关 键 词：氧化硅 SOI CMOS 硅膜 结构 

分 类 号：TN304.21[电子电信—物理电子学]