IC制造中真实缺陷轮廓的分形特征  

Fractal Characterization of Real Defects Outlines in IC Manufacturing Process

作　　者：姜晓鸿[1] 郝跃[1] 许冬岗[1] 徐国华[1] 

机构地区：[1]西安电子科技大学微电子所

出　　处：《Journal of Semiconductors》1998年第2期123-126,共4页半导体学报（英文版）

基　　金：863高科技项目;军事预研项目资助

摘　　要：为了进行有效的集成电路（ＩＣ）成品率预报及故障分析，与光刻有关的硅片表面缺陷通常被假定为圆形的或方形的．然而，真实的缺陷的形貌是多种多样的．本文讨论了缺陷轮廓所具有的分形特征．Abstract For efficient yield prediction and inductive fault analysis of integrated circuits (IC), it is usually assumed that defects related to the photolithographic of wafer surface have the shape of circular discs or squares. Real defects, however, exhibit a great variety of different shapes. The fractal characterizations of real defect outlines are discussed. The results obtained in this paper will be usefull for a fine characterization and computer simulation of the defects on wafer.

关 键 词：IC 制造工艺 分形 缺陷轮廓 

分 类 号：TN405[电子电信—微电子学与固体电子学]