光电子材料InP与金属接触的物理特性研究  

Characteristic Analyses for InP Contacted with Metals

作　　者：徐建成[1,2] 陈定钦[1,2] 

机构地区：[1]首都师范大学物理系 [2]中国科学院半导体研究所

出　　处：《光电子．激光》1998年第1期68-70,共3页Journal of Optoelectronics·Laser

摘　　要：本文讨论了ＩｎＰ与金属接触时的电荷输运方式；给出了ｎ型ＩｎＰ材料掺杂浓度为（１×１０１５～１×１０１７）ｃｍ－３时电子输运（以热电子发射为主）的数学表达式；测量了国产ＩｎＰ单晶与一些金属的接触势垒；分析了“金属－ｎ＋－ＩｎＰ”结构，得到了ｎ＋区厚度和势垒高度间的关系。理论结果与实验符合，表明采用该结构，可得到一个势垒极低的金属与ＩｎＰ电极的欧姆接触。This paper report various ways in which current can be transported through a metal indium phosphide.For n InP having the doped density of (1×10 15 ～1×10 17 )cm -3 thermionic emission from InP over the barrier top into metal is a predominant one.The barrier height for a home made InP in contact with some metals are given.For InP the barrier height is smaller than GaAs because the covalent tetrahedral atomic radii of elements In and P is mismatch.The 'metal-n + InP' constructure have been analysed detailedly.The relationships between the thickness of the thin highdoped layer n + and the barrier height lowering are obtained theoretically.The results are in good agreement with the experiment.

关 键 词：欧姆接触 金属势 光电子材料 

分 类 号：TN305.93[电子电信—物理电子学] TN204