SiCN扩散阻挡层薄膜的制备及特性研究  

Preparation and properties of SiCN diffusion barrier film for Cu interconnect in ULSI

作　　者：周继承[1] 石之杰[1] 郑旭强[1] 

机构地区：[1]中南大学物理科学与技术学院,湖南长沙410083

出　　处：《功能材料》2009年第1期23-25,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60371046);湖南省国际合作资助项目(1713-394201034)

摘　　要：采用磁控溅射法在单晶硅衬底上制备了SiCN及Cu/SiCN薄膜,并对试样进行了退火处理。利用原子力显微镜(AFM)、X射线衍射(XRD)、四探针测试仪(FPP)研究了SiCN薄膜的表面形貌、物相结构及在Cu/SiCN/Si结构中SiCN薄膜对铜与硅的阻挡性能。结果表明,沉积态SiCN薄膜为无定型的非晶结构,晶化温度在1000℃以上;SiCN薄膜作为Cu的扩散阻挡层有较好的热稳定性及阻挡性,阻挡失效温度在600℃左右。SiCN thin films and Cu/SiCN/Si structures were fabricated through magnetron sputtering. And the rapid thermal annealing（RTA） processing were undergoing for some thin-films samples. The thin-films surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy（AFM）, X-ray diffraction（XRD）, Alpha step IQ profiler and Four-point probe（FPP）. The results show that the as-deposited SiCN thin-films were amorphous structure, and their crystallization temperature is upon 1000℃. The Cu/SiCN/Si structure has a good thermal stability, and the SiCN thin-films are still able to prevent the diffusion reaction between Cu and Si interface after 5min RTA processing at 600℃.

关 键 词：SiCN薄膜 铜互连 电介质阻挡层 磁控溅射 

分 类 号：TN304.055[电子电信—物理电子学]