化学气相沉积法制备GaN纳米线和纳米棒  

Synthesis of GaN nanowires and nanorods by CVD method

作　　者：王英[1] 薛成山[1] 庄惠照[1] 王邹平[1] 张冬冬[1] 黄英龙[1] 

机构地区：[1]山东师范大学半导体研究所,山东济南250014

出　　处：《功能材料》2009年第1期152-153,158,共3页Journal of Functional Materials

基　　金：国家自然科学基金重大研究计划资助项目(90201025);国家自然基金资助项目(90301002)

摘　　要：采用浸渍法在未抛光的硅衬底上涂抹一层NiCl2薄膜，通过化学气相沉积法（CVD）制备出高质量的GaN纳米线和纳米棒。X射线衍射（XRD）、傅立叶红外吸收光谱（FTIR）、选区电子衍射（SAED）和高分辨透射电子显微镜（HRTEM）的分析结果表明，采用此方法得到了六方纤锌矿结构的GaN单晶纳米线。通过扫描电镜（SEM）观察发现纳米线的形貌，纳米线的直径在50～200nm之间，纳米棒的直径在200～800nm之间。GaN nanowires and namorods were successfully prepared by CVD method using NiCl2 as catalyst. The NiCl2 thin films were prepared by dipping method. The results of XRD,FTIR,SAED and HRTEM confirm that the as-grown films are single-crystal hexagonal GaN with wurtzite structure. We observed the morphology of GaN nanowires and nanorods by SEM. We found that the diameter of GaN nanorods was between 200 and 800nm,and the diameter of GaN nanowires was between 50 and 200nm.

关 键 词：GAN纳米结构 NiCl2 CVD 

分 类 号：TN304.23[电子电信—物理电子学]