硅基波导与GeSi/Si超晶格探测器之间光电集成器件的研制  

Fabrication of Intergrated GeSi/Si Superlattic PIN Photodetector with Waveguide

作　　者：李娜[1] 许雪林 李国正[1] 刘恩科[1] 蒋最敏[2] 张翔九[2] 王迅[2] 

机构地区：[1]西安交通大学电子工程系 [2]复旦大学表面物理国家重点实验室

出　　处：《光学学报》1998年第4期471-473,共3页Acta Optica Sinica

基　　金：国家自然科学基金

摘　　要：用分子束外延法将ＧｅＳｉ／Ｓｉ超晶格结构生长在ｎ＋／ｎＳｉ材料上，先后用反应离子刻蚀法形成探测器波导和硅脊波导，经适当工艺实现硅波导与ＰＩＮ探测器之间的光电集成，５Ｖ偏压下ＰＩＮ探测器的最小暗电流为０．８μＡ，最大光响应电流为２．７μＡ，最大总量子效率为１４％，工作波长为λ＝１．３μｍ。The GeSi/Si superlattices structure is grown on the n +/n - Si wafer by MBE method. The detector and the Si rib waveguides are formed by reactive ion etching. The integration of Si waveguide and GeSi/Si superlattices PIN photodetector is fabricated throuth the suitable process. The minimum dark current of PIN detector is 0.8 μA and the maximum photocurrent is 2.7 μA at 5 V reverse bias. The maximum overall quantum efficiency of photodetector of 14.2% was obtained. The working wavelenth λ=1.3 μm.

关 键 词：波导 光电探测器 超晶格 硅基 光电集成器件 

分 类 号：TN25[电子电信—物理电子学] TN206