硅片塑性形变与位错  

Plastic Deformation and Dislocation of Silicon Wafer

作　　者：谢书银[1] 袁鹏 万关良[2,3] 李励本 张锦心 

机构地区：[1]中南工业大学应用物理与热能工程系 [2]北京有色金属研究总院 [3]浙江大学硅材料国家重点实验室

出　　处：《稀有金属》1998年第3期208-211,共4页Chinese Journal of Rare Metals

基　　金：硅材料国家重点实验室基金

摘　　要：通过１２００℃、１５ｈ急冷热处理实验，研究了硅中位错对高温塑性形变的影响及热处理过程中位错密度的变化。实验结果表明，硅中原有位错密度越大或热处理急冷温度越高，均使塑性形变更加严重。位错密度为０４～２×１０３ｃｍ－２的硅片的弯曲度变化是无位错硅片的３倍多，１２００℃急冷产生的形变量是７７０℃急冷的４倍。无位错硅片在高温热处理中会产生大量位错，且急冷温度越高，产生的位错越多。热处理中区熔硅片容易在边缘产生位错星形结构。The effect of dislocation in silicon wafer on the elevated plastic deformation and the change of dislocation density during heat treatment were studied by heat treatment test for silican wafer at 1200℃ for 1.5 h. The results show that the larger the initial dislocation density in the silicon wafer and the higher the rapid cooling temperature during heat treatment, the more serious the plastic diformation of silicon wafer. The change of bow of silicon wafer coled at 1200℃ is 4 times of that at 770℃, and the change of bow of silicon wafer with dislocation density of (0.4～2)×103 cm-2 is 3 times of treatment of dislocationfree silicon wafer. A lot of dislocation is generated in dislocationfree silicon wafer during heat treatment, and the higher the rapid cooling temperature, the more the dislocation generated. The dislocation star structure is grnerated at the edge of FZSi during heat treatment.

关 键 词：硅片 塑性形变 位错 热处理 

分 类 号：TN304.12[电子电信—物理电子学]