In-As-Sb-C-H五元系热力学分析与In(As,Sb)MOVPE工艺设计  

Thermodynamic Analysis of InAs-Sb-C-H System and Design of MOVPE Process for In(As,Sb) Semiconductor

作　　者：李静波[1] 张维敬[1] 李长荣[1] 杜振民[1] 

机构地区：[1]北京科技大学材料科学与工程系

出　　处：《稀有金属》1998年第3期216-218,共3页Chinese Journal of Rare Metals

摘　　要：本文模拟ＭＯＶＰＥ工艺设定热力学条件，建立了涉及５个相和５４个气相物种的ＩｎＡｓＳｂＣＨ五元系热力学系统。采用先进的热力学计算方法，对该系统进行了热力学分析。计算结果与实验结果比较发现，热力学计算能较好地预测系统相关系及半导体相成分。A In-As-Sb-C-H system composed of 5 phases and 54 gaseous species was set up to simulate the MOVPE process of the In(As,Sb) semiconductor. Several phase diagram sections and the composition dependences of semiconductors on the amount of the input ⅢⅤ sources were calculated with the conditions defined according to practical MOVPE processes. The experimental data were collected and compared with the calculated results.

关 键 词：热力学分析 MOVPE 铟 锑 砷 

分 类 号：TG146.4[一般工业技术—材料科学与工程]