氧氮磷杂质对硅片高温形变的影响  

THE EFFECT OF NITROGEN, OXYGEN AND PHOSPHORUS ON ELEVATEDTEMPERATURE DEFORMATION OF SILICON WAFER

作　　者：谢书银[1] 王丙义[1] 蔡爱军[1] 李立本[2] 张锦心[2] 

机构地区：[1]中南工业大学应用物理与热能工程系 [2]浙江大学硅材料国家重点实验室

出　　处：《中南工业大学学报》1998年第1期58-61,共4页Journal of Central South University of Technology(Natural Science)

基　　金：硅材料国家重点实验室基金

摘　　要：通过模拟集成电路高温工艺的１２００℃，１．５ｈ后急冷热处理，研究了硅中氧、氮、磷３种杂质对硅片高温工艺过程中塑性形变的影响．实验结果表明，普通氩气氛下直拉单晶硅（ＡＣＺＳｉ）高温弯曲度变化只是含氧很少的区熔硅（ＦＺＳｉ）的１／３左右．在含氮气氛下直拉硅（ＮＣＺＳｉ）中，氮含量为４．５×１０１５ｃｍ－３的单晶尾部高温热处理弯曲度约是氮含量很小的单晶头部的１／３，重掺磷硅片热处理形变比普通硅片大得多．おhe effects of nitrogen, oxygen and phosphorus in silicon on the deformation of silicon wafer cooled rapidly after heat treating at 1200 ℃ for 1.5 h were studied by simulation experiment of IC high temperature process. The results showed that elevated bow change of ACZSi was only 13of that of FZSi; the elevated bow change of head of NCZSi crystal which contains fewer N was 3 times of that of tip of NCZSi containing N 4.5×1015 cm-3. The elevated deformation of silicon wafer heavily doped with P was larger than that of ordinary silicon wafer.

关 键 词：氧氮磷杂质 硅片 高温形变 

分 类 号：TN304.12[电子电信—物理电子学]