纳米结构硅研究的发展动态  

DEVELOPMENT ON THE STUDY OF NANOSTRUCTURED SILICON

作　　者：陈昌武[1] 王卫乡[1] 

机构地区：[1]华南师范大学

出　　处：《华南师范大学学报（自然科学版）》1998年第1期106-111,共6页Journal of South China Normal University(Natural Science Edition)

基　　金：广东省基金

摘　　要：本文综合归类了目前制备纳米结构硅的主要方法：等离子体化学气相沉积．激光诱导化学气相沉积和热蒸发法（制纳米晶硅）及电化学腐蚀法（制多孔硅），给出各种方法的典型参数及其对纳米硅结构的影响，分析了纳米硅结构特征，比较分析了各种方法制备的纳米硅的光学性能，如光学能隙Ｅｏｐｔｇ，光致／电致发光谱峰位波长、半高宽及影响因素等，并对纳米硅研究的发展前景进行展望．In this paper,the principal methods for preparing nanostructured silicon are summarised and classified as:the plasma enhanced chemical vapor deposition,the laser-induced chemical vopor deposition,and the thermal vaporisation(for preparing nanocrystalline sillicon), and the electro-chemical corrosion (for preparing porous silicon).The typical parameters and the effect of the parameters on the structure of the nanocrystalline silicon are presente.The physical properties of the nanoscale silicon are analysed, such as optical energy gap, spectral peak wavelength of photo/electro-luminescence,full width at half maximum and the factors affecting them. Trends of study on nanoscale silicon are discussed.

关 键 词：纳米结构 硅 制备方法 光学性能 半导体 

分 类 号：TN304.12[电子电信—物理电子学]