靶电流对非平衡磁控溅射制备无氢碳膜结构与性能的影响  

Effect of Target Current on Structure and Characteristics of the Hydrogen-free Carbon Films by Unbalanced Magnetron Sputtering

作　　者：刘衡平[1] 徐均琪[1] 严一心[1] 

机构地区：[1]西安工业大学陕西省薄膜技术与光学检测重点实验室,陕西西安710032

出　　处：《表面技术》2009年第1期8-10,53,共4页Surface Technology

基　　金：西安市科技创新支撑计划项目(YF07051);陕西省科技计划项目(2007K07-17)

摘　　要：利用非平衡磁控溅射(UBMS)技术在硅基片上制备了无氢碳膜,并采用Raman光谱、X射线衍射、傅立叶变换光谱等手段对不同靶电流下沉积的薄膜的微观结构、沉积速率、粗糙度、表面接触角及红外透过率进行了研究。试验结果表明:随着靶电流的增大,薄膜的沉积速率增大,薄膜中sp3键含量增加,薄膜表面接触角增大,红外透过率增大;而薄膜的粗糙度随靶电流增加而减小。靶电流是影响非平衡磁控溅射制备无氢碳膜结构与性能的1个主要因素。Hydrogen-free carbon films were deposited on silicon substrates by unbalanced magnetron sputtering （UBMS） technology. The microstrueture, deposition rate, roughness, contact angle and infrared transmittance of the films were investigated by Raman spectra, X-ray diffraction and so on. The results show that the films＇ deposition rate, sp3 bonds content, contact angle and infrared transmittance increase with increasing of the working current of target. The roughness of carbon films reduce with the increasing of the working current of target. Working current of target plays an important role in carbon film deposition.

关 键 词：非平衡磁控溅射 类金刚石 性能 结构 

分 类 号：TG174.444[金属学及工艺—金属表面处理] O484.4[金属学及工艺—金属学]