N含量对CN_x薄膜结构和介电性能的影响  

Influence of N on structure and dielectric properties of CN_x thin films

作　　者：光磊[1] 徐军[1] 张明明[1] 陆文琪[1] 赵艳艳[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,辽宁大连116024

出　　处：《真空》2009年第1期17-21,共5页Vacuum

摘　　要：利用双放电腔微波ECR等离子体增强非平衡磁控溅射(MW-ECR PEUMS)系统,在室温下制备CNx薄膜。通过傅立叶变换红外光谱、X光电子能谱表征技术以及椭偏仪测试手段,研究了N含量对CNx薄膜结构和介电性能的影响。研究结果表明,随着CNx薄膜N/C比的增大,sp3C-N的形成受到抑制,sp2C-N的形成增多,薄膜折射率以及介电常数电子极化贡献部分降低。Low dielectric constant carbon nitride thin films were deposited on silicon substrate at room temperature by the twin-microwave ECR plasma source enhanced unbalanced magnetron sputtering system. Fourier transform infrared spectroscopy （FT-IR） and X-ray photoelectron spectroscopy （XPS） were used to study the composition and the bonding structure of the films. The refractive indexes of CNx films were measured with ellipsometry .The results showed that N content increases the sp^3 C-N content and decreases the sp^2 C-N. The refractive index and electronic polarization of dielectric constant decreases with increasing N/C ratio.

关 键 词：CNX薄膜 N/C比 折射率 介电常数 电子极化 

分 类 号：O484.5[理学—固体物理] TB43[理学—物理]