GaAs/GaAsAl阴极粘结X射线双晶衍射测量  

Measurement of glass-bonded GaAs-GaAlAs photocathode by X-ray double crystal diffractometer

作　　者：阎金良[1] 彭玉田[1] 

机构地区：[1]西安应用光学研究所,西安710100

出　　处：《半导体光电》1998年第2期119-122,共4页Semiconductor Optoelectronics

基　　金：兵科院"九五"预研资助

摘　　要：分析了GaAs／GaAsAl阴极粘结工艺中应力产生的根源和晶体中的应力对X射线双晶衍射峰的宽度和强度的影响。用X射线双晶衍射仪测量了阴极和玻璃热粘结工艺过程中的阴极材料外延层和衬底的双晶回摆曲线。实验结果表明，GaAs／GaAsAl阴极粘结工艺没有带来明显的附加应力，外延层衍射角度的展宽是由于CaAs阴极组件窗玻璃的非晶态性所致。The the sources of stress caused by thermal bonding of GaAs/GaAlAs photocathode are analysed as well as the innuence of crystal stress on width and intensity of X - ray double crystal diffractbo peaks. Some double crystal rocking curves of photocathode epitaxial materials and substrates are measured by means of X - ray double crystal diffractometer during the bonding process. The experimental results show that there is no distinct extra strain in the thermal bonding of GaAs/GaAlAs photocathode. The widening effect is caused by non - crystallinity of the glass window.

关 键 词：砷化镓阴极 玻璃 X射线双晶衍射 

分 类 号：TN304.23[电子电信—物理电子学] TN103