高k栅介质的可靠性问题  

Reliability Issues of High-k Gate Dielectrics

作　　者：王楠[1] 汪辉[1] 

机构地区：[1]上海交通大学微电子学院,上海200240

出　　处：《半导体技术》2009年第1期6-9,87,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(NSFC60606015);上海市浦江人才计划资助项目(05PJ14068);上海交通大学微电子学院科研基金资助项目

摘　　要：随着集成电路特征尺寸的不断缩短,利用先进的高k/金属栅堆叠来取代传统的SiO2/多晶硅栅结构成为微电子技术发展的必然,确保这些新的栅极堆叠类型具有足够的可靠性是非常重要的。综述了高k栅介质可靠性的研究现状,阐明了瞬态充电效应导致的阈值电压不可靠问题,对偏压温度不稳定现象(BTI)和高k击穿特性进行了探讨。With the scalability of the feature size of ICs, using advanced high-k/metal gate stack to replace traditional poly-Si/SiO2 gate structure becomes inevitable, it is very important to guarantee sufficient reliability for these new types of gate stacks. The status of reliability studies of high-k gate dielectrics are reviewed, the problems of threshold voltage instability caused by transient charging effects are illustrated. Some insights in the mechanisms of bias temperature instability （BTI） and high-k breakdown are also discussed.

关 键 词：高介电常数 电荷捕获 金属栅 偏压温度不稳定性 

分 类 号：TN304.1[电子电信—物理电子学] TN386.1