基于Arrhenius模型快速评价功率VDMOS可靠性  

Express Reliability Evaluation of Power VDMOS Based on Arrhenius Model

作　　者：白云霞[1] 郭春生[1] 冯士维[1] 孟海杰[1] 吕长志[1] 李志国[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《半导体技术》2009年第1期79-82,共4页Semiconductor Technology

基　　金：国家863项目(2006AA03A112);北京工业大学博士启动基金(X0002013200802);北京工业大学校青年基金(X1002013200801)

摘　　要：基于Arrhenius模型,对功率器件垂直导电双扩散(VDMOS)场效应晶体管的可靠性进行了评价,并对其主要失效机理进行了分析。通过样管在不同结温下的恒定温度应力加速寿命实验,利用Arrhenius方程和最好线性无偏差估计法(BLUE)对结果进行数据处理,得到其失效激活能E=0.54 eV,在偏置VDS=7.5 V,IDS=0.8 A,推导出功率VDMOS在室温下工作的寿命特征值为3.67×106h。失效分析发现,栅极累积失效是影响功率VDMOS漏源电流IDS退化的主要失效机理。The reliability and failure mechanism of power device VDMOS FET were evaluated based on the Arrhenius model. Through the constant temperature-stress accelerated life test under which the devices were applied at different junction temperatures, the data was processed by using Arrhenius equation and BLUE （best linear unbiased estimation）. The results show that the activation energy is 0.54 eV, when the bias VDS =7.5 V, IDS = 0.8 A, the expectation of life is 3.67 ×10^6 h. Gate cumulative failure is the main failure mechanism which influences the los degradation of power VDMOS.

关 键 词：垂直双扩散场金属氧化物半导体 失效激活能 失效机理 Arrhenius模型 最好线 

分 类 号：TN386[电子电信—物理电子学] TN306