NH3掺杂ZnO薄膜的生长及特性  

Growth and Characterization of the ZnO Thin Films Doped with NH_3

作　　者：马艳[1,2] 张宝林[2] 高福斌[2] 张源涛[2] 杜国同[1] 

机构地区：[1]大连理工大学物理与光电工程学院,辽宁大连116024 [2]吉林大学电子科学与工程学院集成光电子学国家重点联合实验室,长春130012

出　　处：《半导体技术》2009年第2期119-122,共4页Semiconductor Technology

基　　金：国家自然科学基金及重点项目资助(60576054,50532080,60877020);国家博士后科学基金资助项目(20060390988)

摘　　要：采用金属有机物化学气相沉积(MOCVD)方法,以NH3作为N元素的掺杂源,在蓝宝石衬底上生长了掺N的ZnO薄膜。利用X射线衍射、X射线光电子能谱、原子力显微镜、霍尔测量及光致荧光光谱等测试技术分析了薄膜的结晶性质、表面形貌、光电性质及掺杂元素N的价键特性。结果表明,NH3的掺杂会影响ZnO薄膜的结晶特性,薄膜虽然仍是(002)面择优取向生长,但同时也出现了ZnO的(100)及(101)面生长。在薄膜生长时N元素掺入到ZnO薄膜当中,并形成N—Zn、N—H、N—C键。C、H杂质的存在,使掺N ZnO薄膜表现为高阻,同时也影响了薄膜的光致发光特性。Nitrogen-doped ZnO thin films were prepared on sapphire substrates by doping with NH3 by MOCVD. The films were characterized by X-ray diffraction （XRD）, X-ray photoelectron spectroscopy, atomic force microscope, Hall effect measurement and photoluminescence spectrum. It is found that the flow rate of NH3 effects on the crystalline of the ZnO： N thin films, which are multi-oriented and dominated by the （002） preferred orientation. Nitrogen was effectively doped into the ZnO films and bonded with Zn, H and C atoms. The films with high resistivity are not p-type conductivity due to the impurities of C and H. Simultaneously, the optical property of the films is influenced by the impurities.

关 键 词：氧化锌薄膜 氨气掺杂 金属有机物化学气相沉积 特性 

分 类 号：TN304.2[电子电信—物理电子学] TN305.3