6H-SiC埋沟MOSFET的C-V特性研究  

C-V characteristics of 6H-SiC buried-channel MOSFET

作　　者：王玉青[1] 王巍[1] 申君君[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065

出　　处：《重庆邮电大学学报（自然科学版）》2009年第1期74-77,共4页Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition)

基　　金：重庆市科委自然科学基金项目(CSTC;2006BB2364)

摘　　要：研究了6H-SiC埋沟MOSFET器件的电容-电压解析模型,分析了埋沟MOSFET各种工作模式下的电容与电压之间的关系。在建模过程中考虑了SiO2/SiC界面态及PN结的影响,并仿真分析了耗尽模式、夹断模式下器件总的C-V特性的模型。由于在假设界面态密度分布均匀条件下,对界面态做了简化处理,因而计算结果与实验结果有所差异。The C-V characteristics of the 6H-SiC buried-channel MOSFET analytical model was investigated, and the C-V relationships in each model, such as accumulation, inversion, depletion and pinch off, were simulated. The C-V characteristics in depletion model and pinch off model were analyzed, and the effect of the interface states on SiO2/SiC interface and pn junction was considered in the analytical model. The assumption of uniform distribution for interface state was used in order to simplify the theoretical model. Finally the numerical resuhs were compared with the experimental result, and the causes for difference between the two resuhs were analyzed.

关 键 词：SIC 埋沟MOSFET C—V特性 界面态 

分 类 号：TN432[电子电信—微电子学与固体电子学]