GaN薄膜的溶胶-凝胶法制备及其表征  

Characteristic Analysis and Preparation of GaN Film by Sol-gel Method

作　　者：王珊珊[1] 王雪文[1] 阎军峰[1] 邓周虎[1] 段晓峰[2] 赵武[1] 张志勇[1] 

机构地区：[1]西北大学信息学院,西安710127 [2]中国科学院西安光学精密器械研究所,西安710119

出　　处：《光子学报》2009年第1期171-174,共4页Acta Photonica Sinica

基　　金：西北大学博士科研启动基金(0kydf075)资助

摘　　要：采用溶胶凝胶法成功地制备出氮化镓薄膜.以单质镓为镓源制备镓盐溶液、柠檬酸为络合剂制备出前驱体溶胶,再甩胶于Si(111)衬底上,在氨气氛下热处理制备出GaN薄膜.X射线衍射(XRD)分析及选区衍射分析(SAED)表明所制备的薄膜是六角纤锌矿结构GaN薄膜;XPS分析其表面,结果显示样品中的镓元素、氮元素均以化合态存在,且Ga:N约为1:1;PL谱分析结果表明所制备的薄膜具有优良的发光性能.Thin GaN films were successfully deposited on Si （111） substrates by the Sol-gel technique, which is simple and cost-effective in the preparation of epitaxial films. The precursor sol was prepared when Gallium metal was used as Ga source and citric acid as complexing agent. The as-prepared films were confirmed as single crystalline GaN with wurtzite structure by X-ray diffraction and selected diffraction. X- ray photoelectron energy spectroscopy in the surface of the films proves that Gallium and Nitrogen elements all exist as compound,and the surface stoichiometry of Ga ： N is 1 ： 1. The optic characteristics of the flims was test in PL,and the result reveals that the GaN flims has high luminous performance.

关 键 词：氮化镓薄膜 溶胶-凝胶 六角纤锌矿结构 

分 类 号：O78[理学—晶体学]