Al_xGa_(1-x)N/GaN异质结构中二维电子气的自旋性质  

Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

作　　者：唐宁[1] 沈波[1] 韩奎[1] 

机构地区：[1]北京大学物理学院人工微结构和介观物理国家重点实验室,北京100871

出　　处：《微纳电子技术》2009年第2期65-69,共5页Micronanoelectronic Technology

基　　金：国家重点基础研究发展规划项目(2006CB604908;2006CB921607);国家自然科学基金(60806042;10774001;60736033;60628402);教育部博士点基金(20060001018);北京市自然科学基金(4062017)

摘　　要：Ⅲ族氮化物材料有很长的电子自旋弛豫时间以及很高的居里温度,成为近年来半导体自旋电子学研究的重要材料体系之一。介绍了目前两种最主要的研究AlxGa1-xN/GaN异质结构中二维电子气(2DEG)自旋性质的物理效应:磁电阻的舒伯尼科夫-德哈斯拍频振荡和弱反局域效应,回顾了AlxGa1-xN/GaN异质结构中2DEG自旋性质的研究进展。AlxGa1-xN/GaN异质结构材料中有很强的极化电场,诱导产生很高浓度的2DEG,能够产生相当大能量的自旋分裂,并且这种自旋分裂可以被栅压所调控,因此在自旋场效应晶体管方面有很好的应用前景。然而要实现GaN基自旋电子学器件的应用,GaN中自旋注入效率是目前所面临的问题。Owing to the advantages of long spin relaxation time and high Curie temperature, Ⅲ-nitride semiconductor material is one of the most favorite materials in developing spintronic devices. Two main physical effects are introduced to study spin properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures, including beating pattern Shubnikov-de Haas oscillations and weak-antilocalization effect. The development of the spin properties of the 2DEG in AlxGa1-xN/GaN heterostructures is reviewed. Due to the large polarization-induced field in AlxGa1-xN/GaN heterostructures, a 2DEG with large sheet carrier concentration can be obtained. The spin splitting energy of the 2DEG is very large in AlxGa1-xN/GaN heterostructures. The spin splitting can also be controlled by the gate voltage. Thus it has good application prospects in spin field effect transistors. However, the spin injection efficiency in GaN is still a major problem which hinders the devolopment of GaN-based spintronic devices.

关 键 词：Ⅲ族氮化物半导体 异质结构 二维电子气 自旋 磁输运 

分 类 号：TN304.23[电子电信—物理电子学] O571.22[理学—粒子物理与原子核物理]