薄膜材料研究中的XRD技术  

XRD Technique in the Research of Thin Film Materials

作　　者：周元俊[1] 谢自力[1] 张荣[1] 刘斌[1] 李弋[1] 张曾[1] 傅德颐[1] 修向前[1] 韩平[1] 顾书林[1] 郑有炓[1] 

机构地区：[1]南京大学物理系江苏省光电信息功能材料重点实验室,南京210093

出　　处：《微纳电子技术》2009年第2期108-114,共7页Micronanoelectronic Technology

基　　金：国家重点基础研究发展规划973(2006CB6049);国家高技术研究发展规划(2006AA03A103;2006AA03A118;2006AA03A142);国家自然科学基金(60721063;60676057;60731160628)

摘　　要：晶格参数、应力、应变和位错密度是薄膜材料的几个重要的物理量,X射线衍射(XRD)为此提供了便捷而无损的检测手段。分别从以上几个方面阐述了XRD技术在薄膜材料研究中的应用:介绍了采用XRD测量半导体薄膜的晶格参数;结合晶格参数的测量讨论了半导体异质结构的应变与应力;重点介绍了利用Mosaic模型分析位错密度,其中比较了几种不同的通过XRD处理Mosaic模型,且讨论了它们计算位错密度时的优劣。综合XRD技术的理论及在以上几个方面的最新研究进展,对XRD将来的发展做出了展望。Lattice parameter, stress, strain and dislocation density are critical parameters in the research of thin film materials, and X-ray diffraction （XRD） technique provides a convenient and nondestructive means to measure these physical quantities. The application of XRD technique in thin films research is reviewed from the aspects of lattice constant, stress, strain and dislocation density, respectively. The lattice constant measure of semiconductor thin films by XRD is introduced. The strian and stress in semiconductor heterostructural layers are discussed combining with the measure of lattice parameter. The dislocation density analyzed by Mosaic model is emphatically introduced, including comparison of several methods and analysis of advantage and disadvantage. The future development of XRD technique in thin film research is prospected according to XRD theory and latest progress in these fields.

关 键 词：X射线衍射 晶格参数 应力 应变 位错密度 Mosaic模型 

分 类 号：O72[理学—晶体学] O472