高速沉积微晶硅薄膜光发射谱的研究  

An optical emission spectroscopy study on the high rate growth of microcrystalline silicon films

作　　者：韩晓艳[1] 耿新华[1] 侯国付[1] 张晓丹[1] 李贵君[1] 袁育杰[1] 魏长春[1] 孙建[1] 张德坤[1] 赵颖[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,光电子薄膜器件与技术天津市重点实验室,光电信息技术科学教育部重点实验室,天津300071

出　　处：《物理学报》2009年第2期1344-1347,共4页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2006CB202602 ;2006CB202603);国家自然科学基金(批准号:60506003);国家科技计划配套项目(批准号:07QTPTJC29500)资助的课题~~

摘　　要：采用PR650光谱光度计对高速沉积微晶硅薄膜的生长过程进行了在线监测研究,并对所对应的材料进行了Raman谱和红外吸收谱(FTIR)的测试.结果表明:能反映材料晶化程度的I[SiH*]/I[Hβ*]比值在沉积时间为100s之内有下降的趋势,且反应气体总流量Tfl越小下降趋势越明显,这与拉曼散射光谱对材料的结构测试结果一致;沉积5min时I[Hβ*]/I[Hα*]的强度比值表明氢等离子体中的电子温度随Tfl的增加先减小后增加,相对应的红外吸收谱(FTIR)表明材料的微结构因子R先减小后增加,即氢等离子体的电子温度变化对材料质量有较大的影响.The growth process of microcrystalline silicon thin films deposited at high growth rate was monitored online by optical emission spectroscopy. The properties of the material were studied by Raman and FTIR spectroscopy. The results indicated that the I[SiH^＊]/I[Hβ^＊] ratio decreased during the process, particularly at low total gas flows, which was consistent with the Raman results. The I [Hβ^＊] /I [Hα^＊] ratio detected after the plasma glowed for 5 minutes showed that the electronic temperature first decreased then increased with the increasing F total . The FTIR spectra showed that the microstructure defect fraction R first decreased then increased with increasing F total . This means that the electronic temperature in hydrogen plasma plays an important role in determining the properties of the microcrystalline silicon thin films.

关 键 词：高速沉积 微晶硅薄膜 电子温度 

分 类 号：O484.1[理学—固体物理]