0.7微米i线投影曝光系统光刻物镜的设计与试制  

Design and development of lithography lens in 0.7μm i line projection exposure system

作　　者：陈旭南[1] 姚汉民[1] 

机构地区：[1]中国科学院光电技术研究所

出　　处：《光学技术》1998年第3期57-59,共3页Optical Technique

摘　　要：介绍了微电子专用关键设备０．７μｍｉ线投影曝光系统光刻物镜的主要技术指标，及设计试制中解决的关键单元技术和试制结果。结果表明，数值孔径ＮＡ＝０．４２，光刻工作分辨力０．６μｍ，像场尺寸１４．６ｍｍ×１４．６ｍｍ，畸变＜±０．１μｍ的５倍精缩投影光刻物镜已试制成功。物镜具有双远心和有温度气压控制补偿，在满足高精度成像的同时，又能同时满足暗场同轴对准的特点。The main specifications of lithography lens, solved key unit techniques in design and the development results of 0.7μm i line projection system, which is a special key micro electronic equipment, are reviewed. The results show that 5 × reduction projection lens with numeral aperture NA=0.42, field size 14.6mm×14.6mm and distortion less than ±0.1μm have been fabricated successfully. The bitelecentric lens, control and compensation of temperature and atmosphere pressure, high resolution imagery and dark field TTL alignment in the system are also described.

关 键 词：光学投影系统 镜头 紫外 光刻 微电子工艺 物镜 

分 类 号：TN405[电子电信—微电子学与固体电子学]