反应溅射 Ge_XC_(1-X) 薄膜的沉积速率  

Deposition Rate of GeXC1-X Films Prepared by Reactive Sputtering

作　　者：刘正堂[1] 朱景芝[1] 宋建权 郑修麟[1] 

机构地区：[1]西北工业大学材料科学与工程学院

出　　处：《材料工程》1998年第2期6-8,共3页Journal of Materials Engineering

基　　金：航空科学基金资助项目

摘　　要：系统地研究了射频磁控反应溅射中工艺参数对ＧｅＸＣ１－Ｘ薄膜沉积速率的影响。结果表明，当气体流量比超过某值后，沉积速率有较大的下降。沉积速率随射频功率的增大而增大。某工作气压下有沉积速率的最大值。薄膜厚度随时间的增长规律在出现靶中毒及未出现靶中毒的情况下略有差别。In this paper, GeXC1-X films were prepared by radio frequency magnetron reactive sputtering in CH4/Ar in a wide range of processing parameters The effect of processing parameters on the deposition rate has been studied Experiment results showed that the deposition rate decreased sharply when the gas flow ratio CH4/Ar increased to a certain number With the increase of the radio frequency power, the deposition rate increased A maximum deposition rate occurred varying with the gas pressure The relationship between the film thickness and the deposition time seemed different in targetpoisoning and nontargetpoisoning

关 键 词：磁控反应溅射 沉积速率 靶中毒 碳化锗 薄膜 

分 类 号：TN304.24[电子电信—物理电子学] TN304.055