硅发光研究与进展  

Research and Progress of Silicon Luminescence

作　　者：张荣君[1] 陈一鸣[1] 郑玉祥[1] 陈良尧[1] 

机构地区：[1]复旦大学信息科学与工程学院先进光子学材料与器件国家重点实验室,上海200433

出　　处：《中国激光》2009年第2期269-275,共7页Chinese Journal of Lasers

基　　金：国家自然科学基金重点项目(60638010);国家自然科学基金面上项目(60327002;60778028);教育部留学回国人员科研启动基金资助项目

摘　　要：微电子技术的瓶颈和信息技术发展的需求加速了光电子学在硅基材料上实现光信息处理、光电子集成的研究,利用硅基材料制造出高质量的发光器件对光电子学以至整个信息技术均具有重要意义。由于受间接带隙能带结构的限制,天然硅材料具有很低的发光效率,不利于硅光源的实现。通过采用人工改件的方法提高硅的发光效率,多孔硅、硅纳米晶体、掺Er3+硅纳米晶和硅的受激拉曼散射均是目前可实现硅发光甚至硅激光的町行途径。回顾硅发光研究的历史进程,归纳总结了近年来可实现硅发光几种方法的原理、特点以及当前的研究进展。相信随着硅发光效率的提高及器件制备工艺的发展,硅发光研究不久将出现重大突破性成果,并有可能引起新的信息技术革命。The bottle-neck of microelectronics and the demand of the development of information technology have accelerated the research on optical information processing and optoelectronic integration on Si based material. The success of high quality Si based light sources will make a great impact on optoelectronic and information industry. Limited by indirect band structure, nature silicon has very low light-emission efficiency, which slows down the application of Si-based light sources. Several approaches have been proposed to obtain silicon luminescence, including porous silicon, silicon nanocrystals, Er^3＋ doped silicon nanocrystals and stimulated Raman scattering. Various approaches of silicon luminescence research in recent years are reviewed and the characteristic and achievement of different approaches are introduced. It is believed that breakthrough in Si based light sources will be made and new technology revolution will be started in the near future by the development of device manufacture and the improvement of light-emission efficiency of silicon.

关 键 词：光电子学 硅发光 光子器件 硅基光源 硅纳米晶体 

分 类 号：O472[理学—半导体物理]