啁啾光纤光栅相位掩模槽形控制新方法研究  

Study on a new method for control the profile of chivped phase mask

作　　者：杨卫鹏[1] 刘全[1] 吴建宏[1] 

机构地区：[1]苏州大学信息光学工程研究所,江苏苏州215006

出　　处：《激光杂志》2009年第1期51-52,共2页Laser Journal

摘　　要：在啁啾光纤光栅相位掩模的制作中,针对光刻胶光栅槽形要求比较高的问题,提出离子束刻蚀和反应离子束刻蚀相结合的方法,来实现对相位掩模槽形占宽比的控制。运用高级线段运动算法模拟分析刻蚀中的图形演化,用Ar离子束刻蚀对光刻胶光栅掩模形貌进行修正,然后采用CHF3反应离子束刻蚀,实验和模拟均表明,Ar离子束刻蚀能很好的改善掩模与基片交界处的基片侧壁形貌,使得在CHF3反应离子束刻蚀下能得到较小的占宽比。对槽形控制提供了有意义的实验手段。In the fabrication of holographic - ion beam etching grating, a method combining ion beam etching and reactive ion beam etching is adopted to control the duty cycle . This simplify the fabrication of photoresist grating mask . Advanced segment motion algorithm is applied to simulate and analyze the evolution of surface contour in ion etching. First Ar ion beam etching is used to modify the photoresist grating profile and then CHF3 reactive ion beam etching is used. Experiment and simulation show that Ar ion beam etching can modify the initial photoresist grating profile and produce a smaller duty cycle under the CHF3 reactive ion heron etching. It is a very significant experimental means of controlling the chirped phase mask profile.

关 键 词：离子束刻蚀 反应离子束刻蚀 槽形模拟 占宽比 

分 类 号：TN305.7[电子电信—物理电子学]