两种常用碳化硅反射镜基底表面改性的研究  

Research of the surface modification for two kinds of silicon carbide mirror in common use

作　　者：申振峰[1,2] 高劲松[1] 陈红[1,2] 王彤彤[1,2] 王笑夷[1] 郑宣鸣[1] 范镝[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所,长春130033 [2]中国科学院研究生院,北京100049

出　　处：《光学技术》2009年第1期21-24,共4页Optical Technique

基　　金：国家自然科学基金资助项目(60478035)

摘　　要：利用霍尔离子源辅助电子束蒸发方法,分别在反应烧结碳化硅(RB-SiC)和常压烧结碳化硅(Sintered SiC,S-SiC)基底材料上制备了Si改性膜层,并进行了相关性能测试和分析。经过表面改性,两种基底的表面粗糙度(rms)大幅地降低,镀银后的反射率有较大地提高,基底表面光学质量已满足工程应用要求。在相同工艺条件下,S-SiC基底改性后效果好于RB-SiC基底的情况,主要是因为Si膜在两种基底表面生长情况不同所致。Silicon coatings are prepared on mirrors of RB-SiC and S-SiC substrate for surface modification by means of ebeam evaporation, using End-Hall source for ion assisted deposition（IAD）. Correlated performance of the silicon coatings is tested and analyzed. The roughness （rms） of the two kinds of substrate is reduced greatly and the reflectivity coated with Ag film is improved simultaneously after surface-modification. Surface qualities of the SiC mirror are obviously improved and the requirement of application is attained. Under the same technical conditions, the modified effect of S-SiC is better than that of RB-SiC. It is because of the different growing characteristic of Si film on the two kinds of substrate.

关 键 词：RB-SIC S-SiC 表面改性 粗糙度 散射 Si膜 

分 类 号：O484[理学—固体物理] TN304[理学—物理]