GaAs/AlGaAs异质结中二维电子气子能带的Landau能级耦合  

RESONANT SUBBAND LANDAU LEVEL COUPLING FOR HIGH LYING SUBBANDS OF TWO DIMENSIONAL ELECTRON GASES IN GaAs/AlGaAs HETEROJUNCTION

作　　者：陈张海[1] 胡灿明[1] 刘普霖[1] 史国良[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室

出　　处：《物理学报》1998年第3期494-501,共8页Acta Physica Sinica

摘　　要：采用栅压比谱技术，在相对较低的磁场下，观察到ＧａＡｓ／ＡｌＧａＡｓ异质结中二维电子气第零子能带的Ｎ＝１Ｌａｎｄａｕ能级与高达第五子能带的Ｎ＝０Ｌａｎｄａｕ能级的共振耦合现象，由此精确测量了各子能带能量间距，并与自洽的理论计算结果相比较．同时，讨论了共振子能带Ｌａｎｄａｕ能级耦合所引起的Ｌａｎｄａｕ能级分裂大小与子能带量子数的关系．Abstract  The resonant subband Landau level coupling(RSLC) between the N =1 Landau level of the lowest subband and the N =0 Landau level of the subbands with quantum index up to i =5 of two dimensional electron gases in GaAs/AlGaAs heterojunction was observed under relatively low magnetic field.Several intersubband energies were accurately determined. The experimental results were in good agreement with the self consistent calculations including the depolarization shift and exciton like effect corrections.The quantum index dependence of the level splitting due to the RSLC was discussed. 

关 键 词：电子气 能带 砷化镓 铝镓砷 异质结 能级耦合 

分 类 号：TN304.23[电子电信—物理电子学] O471.5[理学—半导体物理]