极化效应对AlN/GaN共振隧穿二极管电流特性的影响  

Effect of polarization on current characteristics of AlN/GaN resonant tunneling diode

作　　者：汤乃云[1] 

机构地区：[1]上海电力学院电子科学与技术系,上海200090

出　　处：《功能材料与器件学报》2009年第1期34-38,共5页Journal of Functional Materials and Devices

基　　金：上海市教委科研创新项目(项目编号:08LZ142);上海高校选拔培养优秀青年教师科研专项基金(批准号:B01601);上海市重点学科建设项目(项目编号:P1303)资助

摘　　要：本文采用半经验紧束缚能带理论,通过自洽计算薛定谔方程和泊松方程研究了AlN/GaN共振隧穿二极管中极化效应对电流的影响。结果发现,极化效应导致电流曲线发生不对称性,并影响电流的共振电压位置,这与实验报道的结果相一致。并且随着极化电荷的增加,在一定的偏压条件下,只能观测到一个子能级隧穿或者根本没有负微分电阻现象发生。Numerical simulations of effect of polarization on current characteristics of AIN/GaN resonant tunneling diode（RTD） are presented, employing self-consistent Schr？ dinger and Poisson equations in the model of semi - empirical tight binding method. The simulated current - voltage characteristics show strong asymmetry effects and the position of resonant voltage is changed due to polarization charges. Those simulated results are consistent with experimental data. As the polarization charges increase, only one resonant tunneling phenomenon or not can be observed in a certain sweeping voltage.

关 键 词：AlN/GaN 共振隧穿二极管 极化 负微分电阻 

分 类 号：TN304.2[电子电信—物理电子学]