GaAs／AlGaAs多量子阱红外探测器外延材料PL谱研究  

Study on Photoluminescence Spectrum of Quantum Well Infrared Photodetector Epitaxy Structure

作　　者：马楠[1] 邓军[1] 牟明威[2] 史衍丽[3] 沈光地[1] 

机构地区：[1]北京工业大学光电子实验室,北京100022 [2]吉林大学,长春130012 [3]昆明物理研究所,昆明650223

出　　处：《半导体光电》2009年第1期55-58,共4页Semiconductor Optoelectronics

摘　　要：结合薛定谔方程和泊松方程,模拟计算得到GaAs/AlGaAs多量子阱红外探测器外延材料能带图,并对该材料进行光致荧光谱(PL)测量。结合理论计算,由材料吸收峰位置得到势垒高度以及势阱基态位置,采用传输矩阵法得到价带与导带基态能量,并由此推算出相应的红外探测响应波长。以傅里叶变换红外光谱仪对GaAs/AlGaAs多量子阱红外探测器器件进行光谱测量,测量结果表明,所采用的计算方法得出的理论结果与器件的光电流谱吻合较好,利用光荧光谱对外延材料进行测量,可以在器件工艺前,快速确定器件的探测波长,从而更加有效地开展器件的研究。The energy-band diagram of GaAs/AlGaAs multiple quantum well infrared photodetector（QWlP） is calculated by using Schrodinger equation and Poisson equation. The photoluminescence（PL） scan has been performed on the material of QWIP. With theoretical calculation, the peak response wavelength of QWIP is determined. The absorption measurement of the devices was performed in a fourier transform infrared spectrometer（FTIR）. The calculated result shows that the theoretical result which is calculated by the proposed method is considerably coherent with the photocurrent spectrum for the same sample. The photoluminescenee（PL） scan provides a prompt way for detecting wavelength before process and it improves the development of this technology effectively.

关 键 词：多量子阱 红外 光致荧光谱 

分 类 号：TN362[电子电信—物理电子学]